《電子技術(shù)應(yīng)用》
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2.3~2.7 GHz雙模式低噪聲射頻接收前端全集成芯片的設(shè)計(jì)
2021年電子技術(shù)應(yīng)用第7期
饒忠君1,,張志浩1,2,,章國(guó)豪1,,2
1.廣東工業(yè)大學(xué) 信息工程學(xué)院,廣東 廣州510006,;2.河源廣工大協(xié)同創(chuàng)新研究院,廣東 河源517000
摘要: 基于GaAs pHEMT工藝設(shè)計(jì)了一款2.3~2.7 GHz雙模式低噪聲射頻接收前端全集成芯片,。該接收前端芯片包含一個(gè)單刀雙擲(SPDT)收發(fā)開(kāi)關(guān)及一個(gè)帶旁路功能的低噪聲放大器,。一方面,采用帶源級(jí)電感負(fù)反饋的共源共柵結(jié)構(gòu)實(shí)現(xiàn)了放大器模式,,將SPDT開(kāi)關(guān)作為放大器輸入匹配網(wǎng)絡(luò)的一部分,,一體化優(yōu)化設(shè)計(jì)獲得最少元件及較高Q值的輸入匹配網(wǎng)絡(luò),,進(jìn)而實(shí)現(xiàn)低噪聲、高增益和良好的輸入回波損耗匹配,;另一方面,,采用多組開(kāi)關(guān)聯(lián)合實(shí)現(xiàn)了旁路功能用于衰減高輸入功率的射頻信號(hào),。測(cè)試結(jié)果表明,,在2.3~2.7 GHz的寬頻帶范圍內(nèi),實(shí)現(xiàn)的接收前端芯片在LNA模式下的噪聲系數(shù)可達(dá)到1.53~1.64 dB的較低水平,,且增益在18.1~19.2 dB之間,,在2.5 GHz時(shí)輸入1 dB壓縮點(diǎn)為-1.5 dBm;在旁路模式下,,插入損耗在工作頻段內(nèi)維持在約6~7 dB的水平,。
中圖分類號(hào): TN722.3
文獻(xiàn)標(biāo)識(shí)碼: A
DOI:10.16157/j.issn.0258-7998.211497
中文引用格式: 饒忠君,張志浩,,章國(guó)豪. 2.3~2.7 GHz雙模式低噪聲射頻接收前端全集成芯片的設(shè)計(jì)[J].電子技術(shù)應(yīng)用,,2021,47(7):17-20,,47.
英文引用格式: Rao Zhongjun,,Zhang Zhihao,Zhang Guohao. Design of a 2.3~2.7 GHz dual-mode low-noise RF receiver front end[J]. Application of Electronic Technique,,2021,,47(7):17-20,47.
Design of a 2.3~2.7 GHz dual-mode low-noise RF receiver front end
Rao Zhongjun1,,Zhang Zhihao1,,2,Zhang Guohao1,,2
1.School of Information, Guangdong University of Technology,,Guangzhou 510006,China,; 2.Synergy Innovation Institute of GDUT,,Heyuan,Heyuan 517000,,China
Abstract: A fully-integrated dual-mode low-noise RF receiver front-end for the 2.3 GHz~2.7 GHz band was presented based on a GaAs pHEMT technology. The receiver front-end consists of a single-pole double-throw(SPDT) transmit-receive switch and a low-noise amplifier(LNA)with bypass mode. The cascode common-source structure with inductive degeneration topology is adopted to achieve the LNA.The SPDT switch is embedded into the input matching network as a concurrent design to realize high Q matching network with minimum components for low noise, high gain and superior input return loss matching. Concurrent design of multiple switches for Bypass function is utilized to attenuate the high input power transmissions. The measurement results show that the presented FEM exhibits low noise figure of 1.53~1.64 dB and gain of 18.1~19.2 dB for 2.3~2.7 GHz frequency range in the high-gain LNA mode. At 2.5 GHz, the tested input 1 dB compression point at 2.5 GHz is -1.5 dBm. The insertion loss in Bypass mode typically varies from 6 to 7 dB in the operation frequency bands.
Key words : GaAs pHEMT,;low noise amplifier;low noise,;dual mode

0 引言

    近年來(lái),,通信技術(shù)以驚人的速度發(fā)展,新一代移動(dòng)通信芯片將被要求支持更多的頻段和敦促顯著的頻率靈活性,。低噪聲放大器" target="_blank">低噪聲放大器在蜂窩通信,、WLAN,、無(wú)線傳感網(wǎng)絡(luò)和WiMax等領(lǐng)域得到了廣泛運(yùn)用[1]。在2019年RDCAPE會(huì)議,,BANSAL M和JYOTI提出了一款基于CMOS工藝的2.4 GHz藍(lán)牙通信的低噪聲放大器,,它的噪聲系數(shù)為3.695 dB,最大增益為21.154 dB[2],。同年的IEMCON會(huì)議,,KHOSAVI H等人發(fā)表了一個(gè)應(yīng)用于WLAN 2.4 GHz的低噪聲放大器,該低噪聲放大器的增益為15.1 dB,,噪聲系數(shù)為2.7 dB[3],。近年來(lái),對(duì)于寬頻帶低噪放的研究也受到了廣泛的關(guān)注,。例如2020年P(guān)ATHAKR D等人設(shè)計(jì)了一個(gè)工作在2.2~2.55 GHz的無(wú)線傳感器網(wǎng)絡(luò)低噪聲放大器,,在工作頻段內(nèi)的噪聲系數(shù)和增益分別為3.6 dB和24 dB[4]。但是,,這些研究在實(shí)現(xiàn)高增益寬頻帶情況下獲得的噪聲系數(shù)普遍比較大,。為此,本文基于GaAs pHEMT工藝,,設(shè)計(jì)并實(shí)現(xiàn)了一款寬頻帶,、可滿足多種無(wú)線通信服務(wù)需求的帶旁路功能的射頻接收前端全集成芯片。在LNA模式下,,該芯片在2.3~2.7 GHz的寬頻帶范圍內(nèi)可實(shí)現(xiàn)1.53~1.64 dB較低的噪聲系數(shù)和18.1~19.2 dB較高的增益性能,。




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作者信息:

饒忠君1,,張志浩1,,2,章國(guó)豪1,,2

(1.廣東工業(yè)大學(xué) 信息工程學(xué)院,,廣東 廣州510006;2.河源廣工大協(xié)同創(chuàng)新研究院,,廣東 河源517000)



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