中圖分類號： TN86 文獻(xiàn)標(biāo)識碼： A DOI：10.16157/j.issn.0258-7998.201239 中文引用格式： 王宇,，馬偉，胡偉波,，等. 高頻驅(qū)動電路與高效GaN HEMT電源模塊的實現(xiàn)[J].電子技術(shù)應(yīng)用,，2021，47(7)：38-43. 英文引用格式： Wang Yu,，Ma Wei,，Hu Weibo，et al. Realization of high frequency driver circuit and high efficiency GaN HEMT power supply module[J]. Application of Electronic Technique,，2021,，47(7)：38-43.
Realization of high frequency driver circuit and high efficiency GaN HEMT power supply module
Wang Yu，Ma Wei,，Hu Weibo,，Wang Meiyu
College of Electronic Information and Optical Engineering，Nankai University,，Tianjin 300350,，China
Abstract： In order to meet the high efficiency and high power requirement of current power supply module, this paper designs a high frequency drive circuit for gallium nitride device, and builds a high frequency and high efficiency power supply module.By adjusting dead zone minimization processing module and non-overlapping module, this circuit can suppress the high-current pass-through phenomenon of power devices, which is helpful to improve the efficiency of power module.Using the high frequency characteristic of gallium nitride device, the working frequency of power supply system is increased greatly.The test results of the power system show that the time of the output waveform rising edge and falling edge is 10 ns and 5 ns respectively at 1 MHz. At 10 MHz, the time of output waveform rising edge and falling edge is 14 ns and 8 ns respectively. The system can achieve about 10 W high power output. The efficiency of the system at 1 MHz and 10 MHz is 93.7% and 83.5% respectively.
Key words : GaN HEMT；driver circuits,；high frequency,；high efficiency；high power
