中圖分類(lèi)號(hào)： TN724.1 文獻(xiàn)標(biāo)識(shí)碼： A DOI：10.16157/j.issn.0258-7998.211717 中文引用格式： 劉博源，黃昭宇,，江云,，等. 基于新型微組裝技術(shù)的X波段高隔離開(kāi)關(guān)的設(shè)計(jì)[J].電子技術(shù)應(yīng)用，2021,，47(8)：20-25. 英文引用格式： Liu Boyuan,，Huang Zhaoyu，Jiang Yun,，et al. Design of X-band high isolation switch based on new microassembly technology[J]. Application of Electronic Technique,，2021，47(8)：20-25.
Design of X-band high isolation switch based on new microassembly technology
Liu Boyuan1,，Huang Zhaoyu1,，Jiang Yun1，Ji Pengfei1,，Xu Qinghua2,，Zhang Xiaofa1，Yuan Naichang1
1.CEMEE State Key Laboratory,，School of Electronic Science and Engineering,， National University of Defense Technology，Changsha 410003,，China,； 2.Xianfeng Electronic Information Co.，Ltd.,，Sanjiang Aerospace,，Xiaogan 432000，China
Abstract： In order to realize the four-way parallel switching circuit of X-band and improve the isolation between channels effectively, a high isolation switch scheme of X-band based on new microassembly technology was proposed. While analyzing the performance of the Single Pole Double Throw(SPDT) switch and designing corresponding control circuit according to indexes, at the same time, design of cavity in terms of structure and laminated structure of composite multilayer board ensured the isolation between the four switches. Softwares were used to model, simulate and then measure the isolation degree between the channels to decrease the cavity effect. After optimization, the isolation degree of the port could be controlled above 50 dB at the center frequency. The X-band switch component was made by means of microassembly technology, and the advantages of the component performance were verified by comparing the measured data with the simulation results. The design method is unique, practical and suitable for application in practical projects.
Key words : switch；X-band,；isolation,；chip；microassembly
