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InGaAs/GaAs多量子阱近紅外光探測結(jié)構(gòu)設(shè)計與表征
2021年電子技術(shù)應(yīng)用第7期
李林森,,汪 濤,,朱 喆
華東微電子研究所 微系統(tǒng)安徽省重點(diǎn)實(shí)驗(yàn)室,,安徽 合肥230088
摘要: 介紹了用于近紅外光探測的InGaAs三元化合物材料體系,并通過數(shù)學(xué)軟件編寫求解出InGaAs/GaAs單量子阱有限深勢阱的波函數(shù)方程,。根據(jù)計算結(jié)果,設(shè)計出InGaAs/GaAs多量子阱結(jié)構(gòu),,之后采用分子束外延技術(shù)完成了高質(zhì)量外延片結(jié)構(gòu)的研制,,通過雙晶X射線衍射等分析手段,,推算出多量子阱結(jié)構(gòu)中In的組分,勢壘與勢阱的厚度等參數(shù)與理論設(shè)計一致,,具有很好的近紅外探測器研制價值,。
關(guān)鍵詞: InGaAsGaAs 多量子阱 紅外
中圖分類號: TN21
文獻(xiàn)標(biāo)識碼: A
DOI:10.16157/j.issn.0258-7998.211289
中文引用格式: 李林森,汪濤,,朱喆. InGaAs/GaAs多量子阱近紅外光探測結(jié)構(gòu)設(shè)計與表征[J].電子技術(shù)應(yīng)用,,2021,47(7):118-124.
英文引用格式: Li Linsen,,Wang Tao,,Zhu Zhe. Design and characterization the InGaAs/GaAs multiple quantum wells near-infrared light detecting structure[J]. Application of Electronic Technique,2021,,47(7):118-124.
Design and characterization the InGaAs/GaAs multiple quantum wells near-infrared light detecting structure
Li Linsen,,Wang Tao,Zhu Zhe
Anhui Province Key Laboratory of Microsystem,,East China Research Institute of Microelectronics,,Hefei 230088,China
Abstract: This paper summaries InGaAs ternary compound material which can be used to detect near-infrared light,,and solves the wave function equation of the InGaAs/GaAs single quantum well by using mathematics software. The InGaAs/GaAs multiple quantum wells structure is designed and fabricated by MBE on the basis of the calculated conclude. The In component and the thickness of the well and barrier can be calculated by double crystal X-ray diffraction analysis. The results are consistent with theoretical design and could guide the infrared detector development.
Key words : InGaAs/GaAs,;multiple quantum well;infrared

0 引言

    光探測器是一種能夠?qū)⒐庑盘栟D(zhuǎn)換成電信號的器件,,因?yàn)榻?a class="innerlink" href="http://forexkbc.com/tags/紅外" target="_blank">紅外光覆蓋的波長范圍較寬(760 nm~2 526 nm),,對其進(jìn)行探測分析具有潛在的軍民用價值,例如,,可以通過近紅外光探測進(jìn)行敵我識別,、戰(zhàn)略預(yù)警,紅外制導(dǎo)可以實(shí)現(xiàn)末端打擊,,紅外夜視可用于單兵作戰(zhàn),,民用領(lǐng)域主要有近紅外光纖通信、工業(yè)探傷檢測,、氣象探測與地球資源探測,、安防監(jiān)控等[1-4]。正是因?yàn)榻t外探測的諸多應(yīng)用需求,,使得全世界范圍內(nèi)的科研工作者傾注了大量的精力去研究近紅外特測材料,、結(jié)構(gòu)及器件。近年來,,隨著對固體物理,、半導(dǎo)體物理的認(rèn)識不斷深入,以及先進(jìn)制造技術(shù)例如分子束外延(MBE)、金屬化合物氣相沉積(MOCVD),、原子層沉積(ALD)等的不斷發(fā)展,,科研工作者可以根據(jù)半導(dǎo)體能帶結(jié)構(gòu)與特征設(shè)計一些新穎的結(jié)構(gòu)例如量子阱、量子點(diǎn)等以實(shí)現(xiàn)各探測波段的高性能,,并通過先進(jìn)的半導(dǎo)體制程實(shí)現(xiàn)探測器的小尺寸和高可靠性,。




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作者信息:

李林森,,汪  濤,,朱  喆

(華東微電子研究所 微系統(tǒng)安徽省重點(diǎn)實(shí)驗(yàn)室,安徽 合肥230088)




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