中圖分類號(hào)：TN72 文獻(xiàn)標(biāo)志碼：A DOI: 10.16157/j.issn.0258-7998.245672 中文引用格式： 麻澤龍，吳景峰,，余小輝. 基于系統(tǒng)級(jí)封裝技術(shù)的X頻段變頻模塊研制[J]. 電子技術(shù)應(yīng)用,，2024，50(12)：105-111. 英文引用格式： Ma Zelong,，Wu Jingfeng,，Yu Xiaohui. Development of X-band RF transceiver module with system in package technology[J]. Application of Electronic Technique，2024,，50(12)：105-111.
Development of X-band RF transceiver module with system in package technology
Ma Zelong,，Wu Jingfeng，Yu Xiaohui
The 13th Research Institute of China Electronics Technology
Abstract： A miniaturized X-band dual-channel radio frequency(RF) transceiver module is designed by using system in package(SiP) technology, which integrates devices based on a variety of process. Receiving channel and transmitting channel are integrated into a cavity, and time-sharing control for transmitting and receiving is achieved. Double-cavity structure is used and different cavities are vertically interconnected through the ball grid arrays to reduce the module size significantly. The size of SIP module is 21 mm×16 mm×3.8 mm. The main measured technical specifications of the modules are as follows: The P-1dB of receiving channel ≤-10 dBm, receiving signal gain 30～35 dB, isolation degree of the receiving channel ≥55 dB, receiving noise figure ≤8 dB; gain of transmission channel 10～12 dB, maximum output power of transmission channel ≥12 dBm, second and third harmonic suppression ≥60 dBc, clutter rejection ≥55 dBc, the module can function properly within the temperature range of -55～+85 ℃. The measured results are basically agreed with the simulation results.
Key words : X-band,；RF transceiver system,；system in package；BGA ball grid arrays
引言
系統(tǒng)級(jí)封裝技術(shù)（System in Package,，SiP）是將多個(gè)具有不同功能的有源電子器件與無(wú)源元件等其他器件組裝成為可以提供多種功能的單個(gè)標(biāo)準(zhǔn)封裝件,，形成一個(gè)系統(tǒng)或者子系統(tǒng)[1]。相較于片上系統(tǒng)（System on Chip,，SoC）,，系統(tǒng)級(jí)封裝的最大優(yōu)勢(shì)就是可以采用具有不同工藝（CMOS、Bi-CMOS等）和封裝技術(shù)（MCM）的器件制作出具有不同功能（發(fā)射接收通道,、耦合器,、頻率源）的系統(tǒng)[2]，充分發(fā)揮各工藝的優(yōu)勢(shì),，且可以降低研發(fā)周期,，節(jié)約成本[3],。射頻SiP是SiP模塊的一個(gè)重要研究方向[4]，主要基片類型包括硅基,、低溫共燒陶瓷（Low Temperature Co-fired Ceramic,，LTCC）以及多層板等，芯片連接類型包括倒裝,、芯片層疊,，封裝類型包括球柵陣列（Ball Grid Array，BGA）,、柵格陣列（Land Grid Array,，LGA）等[5]。在文獻(xiàn)[6]中研究人員設(shè)計(jì)了一款基于SiP技術(shù)工作頻段為8~12 GHz的收發(fā)模塊[6],，內(nèi)部集成了高功率放大器,、低噪聲放大器、單片微波集成芯片,、單刀雙擲開(kāi)關(guān)等器件,，不同層間通過(guò)接插件連接，尺寸僅為13.8 mm×13.8 mm×6.1 mm,。
