中圖分類號(hào)： TN386 文獻(xiàn)標(biāo)識(shí)碼： A DOI：10.16157/j.issn.0258-7998.200512 中文引用格式： 熊倩,，馬奎，楊發(fā)順. FinFET器件結(jié)構(gòu)發(fā)展綜述[J].電子技術(shù)應(yīng)用,，2021,，47(1)：21-27. 英文引用格式： Xiong Qian，Ma Kui,，Yang Fashun. Overview of FinFET device structure development[J]. Application of Electronic Technique,，2021，47(1)：21-27.
Overview of FinFET device structure development
Xiong Qian1,，Ma Kui1,，2，Yang Fashun1,，2
1.College of Big Data and Information Engineering,，Guizhou University，Guiyang 550025,，Chnia,； 2.Semiconductor Power Device Reliability Engineering Research Center of Ministry of Education，Guiyang 550025,，China
Abstract： With the rapid development of integrated circuit technology, the size of devices continues to shrink. When the channel of the field effect transistor is shortened to 22 nm, the traditional planar field effect transistor no longer meets the development needs. FinFET is a new type of three-dimensional device, which is currently widely researched and applied due to its good performance. It mainly introduces the basic structure and basic process flow of FinFET devices, as well as some improved FinFET device structures developed on the basic structure. Finally, combined with the reality, the future development of FinFET device structure is expected.
Key words : field effect transistor,；FinFET；device structure,；process
