無片外電容LDO的研究進展
電子技術應用 11期
李天碩,,李嚴,,劉瑩
(北京信息科技大學,,北京 100192)
摘要: 低壓差線性穩(wěn)壓器(LDO)在電路系統(tǒng)中負責提供穩(wěn)定的電源電壓,它是一種應用廣泛的電源管理芯片,。隨著集成度和工藝的不斷提高,無片外電容LDO逐漸替代含片外電容LDO成為研究重點,,但無片外電容LDO需要額外的補償電路以解決穩(wěn)定性和瞬態(tài)響應特性較差的問題,。為了解當前行業(yè)內(nèi)的主流設計思路,調(diào)研了大量文獻,,分析了無片外電容LDO的研究進展,,并分別總結了提高穩(wěn)定性和瞬態(tài)響應特性的方案,提煉了其中的技術要點,,評價了優(yōu)缺點,,最后提出了可以改進的空間并對今后的研究方向做了展望。
中圖分類號:TN432
文獻標志碼:A
DOI: 10.16157/j.issn.0258-7998.233747
引用格式: 李天碩,,李嚴,,劉瑩. 無片外電容LDO的研究進展[J]. 電子技術應用,2023,,49(11):35-41.
文獻標志碼:A
DOI: 10.16157/j.issn.0258-7998.233747
引用格式: 李天碩,,李嚴,,劉瑩. 無片外電容LDO的研究進展[J]. 電子技術應用,2023,,49(11):35-41.
Progress research on LDO without off chip capacitor
Li Tianshuo,,Li Yan,Liu Ying
(Beijing Information Science and Technology University ,, Beijing 100192,, China)
Abstract: Low dropout linear regulator (LDO) is responsible for providing stable power supply voltage in the circuit system. It is a widely used power management chip. With the continuous improvement of integration and technology, the capacitor-free LDO gradually replaces the LDO with off chip and becomes the focus of research. However, the capacitor-free LDO needs additional compensation circuit to solve the problem of poor stability and transient response characteristics. In order to know the mainstream design ideas in the current industry, a large number of literatures were investigated, the research status of the capacitor-free LDO was analyzed, and the schemes to improve the stability and transient response characteristics were summarized, the technical points were refined, the advantages and disadvantages were evaluated, at last the room for improvement was proposed and the future research direction was prospected.
Key words : low dropout linear regulator;capacitor-free LDO,;compensation circuit,;stability;transient response characteristics
【引言】
電源管理芯片是集成電路系統(tǒng)中的重要模塊,,它的性能直接影響整個系統(tǒng)的性能[1],。低壓差線性穩(wěn)壓器(LDO)是電源管理芯片的一種,它是輸入輸出電壓具有較低電壓差的線性穩(wěn)壓電源,,因其具有功耗低,、結構簡單、面積小,、電源電壓抑制比高,、噪聲低等優(yōu)點[2],被廣泛應用于集成電路系統(tǒng)中[3],。至今,,有越來越多的電路研究者投身于LDO的研究中,并且已經(jīng)取得較好的成果,,未來還將不斷推出新的電路結構和優(yōu)化方法,。
通常稱有片外電容的LDO為傳統(tǒng)LDO,,而沒有片外電容的LDO為新型LDO。本文將首先分析傳統(tǒng)LDO的局限,,再介紹新型LDO在改善穩(wěn)定性和速度方面的研究進展,,最后將介紹其他性能指標的優(yōu)化方法,。
文章詳細內(nèi)容下載請點擊:無片外電容LDO的研究進展AET-電子技術應用-最豐富的電子設計資源平臺 (chinaaet.com)
【作者信息】
李天碩,,李嚴,劉瑩
(北京信息科技大學,,北京 100192)
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