《電子技術(shù)應(yīng)用》
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基于表面掃描法的SiP器件近場(chǎng)電磁輻射測(cè)試方法
2022年電子技術(shù)應(yīng)用第7期
高 成1,李 維1,梅 亮2,林辰正1,黃姣英1
1.北京航空航天大學(xué) 可靠性與系統(tǒng)工程學(xué)院,北京100191;2.航天科工防御技術(shù)研究試驗(yàn)中心,北京100854
摘要: 在近場(chǎng)電磁輻射測(cè)試研究中,還沒(méi)有一套完整的面向單個(gè)元器件的測(cè)試方法。針對(duì)此問(wèn)題,基于表面掃描法對(duì)SiP器件的近場(chǎng)電磁輻射測(cè)試方法進(jìn)行研究。第一,利用X光研究SiP器件內(nèi)部結(jié)構(gòu)并進(jìn)行干擾源分析;第二,完成硬件、軟件層搭建使器件進(jìn)入工作狀態(tài);第三,搭建近場(chǎng)測(cè)試系統(tǒng),對(duì)工作中的器件實(shí)施近場(chǎng)測(cè)試。在案例研究中,所用SiP器件內(nèi)部封裝外圍器件和作為主要干擾源的處理器。近場(chǎng)測(cè)試結(jié)果顯示,PCB上輻射主要集中在SiP器件周圍,器件近場(chǎng)輻射集中在處理器芯片處。案例研究的結(jié)果說(shuō)明這種測(cè)試方法可以有效測(cè)量SiP器件的近場(chǎng)電磁輻射,并對(duì)器件內(nèi)干擾源進(jìn)行分析。
中圖分類號(hào): TN407
文獻(xiàn)標(biāo)識(shí)碼: A
DOI:10.16157/j.issn.0258-7998.212395
中文引用格式: 高成,李維,梅亮,等. 基于表面掃描法的SiP器件近場(chǎng)電磁輻射測(cè)試方法[J].電子技術(shù)應(yīng)用,2022,48(7):54-59.
英文引用格式: Gao Cheng,Li Wei,Mei Liang,et al. Near-field electromagnetic radiation test method of SiP device based on surface scanning method[J]. Application of Electronic Technique,2022,48(7):54-59.
Near-field electromagnetic radiation test method of SiP device based on surface scanning method
Gao Cheng1,Li Wei1,Mei Liang2,Lin Chenzheng1,Huang Jiaoying1
1.School of Reliability and Systems Engineering,Beihang University,Beijing 100191,China; 2.China Aerospace Science & Industry Corp Defense Technology R&T Center,Beijing 100854,China
Abstract: In the research of near-field electromagnetic radiation test, there is no complete set of test methods for individual components. Aiming at this problem, a near-field electromagnetic radiation test method for System in Package(SiP) devices is researched based on surface scanning method. Firstly, the internal structure of the SiP device is researched by X-ray and the source of interference is analyzed. Secondly, the hardware and software layer is built to make the device work. Thirdly, a near-field testing system is built to implement near-field test of DUT. In the case research, the SiP device used is encapsulated with peripherals and a processor which is the main interference source. The near-field test results show that the radiation on PCB is mainly concentrated around SiP device, and the near-field radiation of device is concentrated at processor chip. Case research results show that this kind of test method can effectively measure the SiP device of near field electromagnetic radiation, and analyze the interference sources inside the device.
Key words : System in Package(SiP);electromagnetic radiation;surface scanning method;near field scanning test

0 引言

    21世紀(jì)后的電子產(chǎn)品都在追求一個(gè)相同的目標(biāo):便攜、輕薄。這對(duì)現(xiàn)代半導(dǎo)體設(shè)備的輕量小型化、綜合化[1]以及高可靠性提出了更高的要求,如何在這方面取得突破也成為微系統(tǒng)領(lǐng)域的一個(gè)研究熱點(diǎn)[2]。但技術(shù)發(fā)展同時(shí)也暴露出許多問(wèn)題:光刻技術(shù)受限;散熱、漏電問(wèn)題;高集成度影響芯片性能;成本問(wèn)題[3]等。因此研究者們開(kāi)始著眼于封裝技術(shù),如系統(tǒng)級(jí)封裝(System in Package,SiP)。它是指多個(gè)有源器件的組合,這些功能不同的器件被組裝在一個(gè)單元中,單元提供系統(tǒng)或子系統(tǒng)功能[4-9]。這種具有3D封裝特色的封裝方案[10]不僅極大程度縮減封裝體積,還具有開(kāi)發(fā)周期短、低成本、低功耗、高性能的優(yōu)點(diǎn),能提高生產(chǎn)效率,簡(jiǎn)化系統(tǒng)開(kāi)發(fā),提升開(kāi)發(fā)彈性與靈活度,降低供應(yīng)鏈管理難度,這也使SiP器件在宇航、武器裝備、可穿戴設(shè)備以及物聯(lián)網(wǎng)等領(lǐng)域里得以廣泛應(yīng)用[7-8,11-15]




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作者信息:

高  成1,李  維1,梅  亮2,林辰正1,黃姣英1

(1.北京航空航天大學(xué) 可靠性與系統(tǒng)工程學(xué)院,北京100191;2.航天科工防御技術(shù)研究試驗(yàn)中心,北京100854)




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