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基于場(chǎng)路耦合的反激變換器板級(jí)輻射研究
2021年電子技術(shù)應(yīng)用第7期
吳鍵澄1,,楊 汝1,2,,余連德3,,揭 海1,,劉佐濂3
1.廣州大學(xué) 電子與通信工程學(xué)院,廣東 廣州510006,;2.廣州大學(xué) 機(jī)械與電氣工程學(xué)院,,廣東 廣州510006; 3.廣州大學(xué) 物理與材料科學(xué)學(xué)院,,廣東 廣州510006
摘要: 輻射干擾問題是制約電源產(chǎn)品高頻化,、小型化的因素之一?;趫?chǎng)路耦合的仿真思路,,建立MOSFET的電磁場(chǎng)有限元模型和高頻變壓器的等效高頻電路模型。結(jié)合從SIwave電磁仿真軟件中提取的PCB網(wǎng)絡(luò)參數(shù),,對(duì)一款5 W輸出的反激變換器的板級(jí)輻射干擾進(jìn)行聯(lián)合仿真,,并對(duì)比了兩種高頻變壓器模型對(duì)遠(yuǎn)場(chǎng)仿真結(jié)果的影響。實(shí)驗(yàn)結(jié)果表明,,在230 MHz以內(nèi)的頻段3 m遠(yuǎn)場(chǎng)仿真超標(biāo)頻點(diǎn)與實(shí)測(cè)吻合,,驗(yàn)證了該仿真方法的正確性,,且簡(jiǎn)化的變壓器二電容模型具有更寬頻帶的適用性;所得到的近場(chǎng)電磁場(chǎng)分布表明MOSFET和變壓器副邊的整流二極管是主要的輻射源,。
中圖分類號(hào): TN86
文獻(xiàn)標(biāo)識(shí)碼: A
DOI:10.16157/j.issn.0258-7998.211471
中文引用格式: 吳鍵澄,楊汝,,余連德,,等. 基于場(chǎng)路耦合的反激變換器板級(jí)輻射研究[J].電子技術(shù)應(yīng)用,2021,,47(7):5-11.
英文引用格式: Wu Jiancheng,,Yang Ru,Yu Liande,,et al. Research on board level radiation of flyback converter based on field circuit coupling[J]. Application of Electronic Technique,,2021,47(7):5-11.
Research on board level radiation of flyback converter based on field circuit coupling
Wu Jiancheng1,,Yang Ru1,,2,Yu Liande3,,Jie Hai1,,Liu Zuolian3
1.School of Electronics and Communication Engineering,Guangzhou University,,Guangzhou 510006,,China; 2.School of Mechanical and Electrical Engineering,,Guangzhou University,,Guangzhou 510006,China,; 3.School of Phyhics and Materials Science,,Guangzhou University,Guangzhou 510006,,China
Abstract: Radiation interference is one of the bottlenecks that restrict the high frequency and miniaturization of power products. Based on the simulation idea of field circuit coupling, the electromagnetic field finite element model of MOSFET and the equivalent high frequency circuit model of high frequency transformer are established. Combined with the PCB network parameters extracted from SIwave,the board level radiation interference of a 5 W output flyback converter is co-simulated, and the influence of two high frequency transformer models on the far-field simulation results is compared. The experimental results show that the simulation results of 3 m far-field within 230 MHz are in good agreement with the measured results, which verifies the correctness of the simulation method, and the simplified two capacitance model of transformer has wider applicability; the obtained near-field electromagnetic field distribution shows that MOSFET is the main source of electric field radiation, and the rectifier diode at the secondary side of transformer is the main source of magnetic field radiation.
Key words : switching mode power supply,;flyback converter;radiation interference,;field circuit coupling

0 引言

    隨著無線充電,、電動(dòng)汽車等新能源技術(shù)的快速發(fā)展,電源產(chǎn)品逐漸趨向高頻化,、小型化,,隨之產(chǎn)生的電磁干擾(EMI)問題正變得日益嚴(yán)重[1]輻射干擾是以電磁波的形式在自由空間中傳播的電磁干擾能量,,近年來愈發(fā)受到人們重視,。依照GB9254-2008等電磁兼容標(biāo)準(zhǔn),,開關(guān)電源產(chǎn)品的輻射干擾指30 MHz~1 GHz頻段的電磁干擾能量,通常在230 MHz以內(nèi)輻射較為嚴(yán)重[2],。針對(duì)開關(guān)電源的輻射干擾,,傳統(tǒng)的仿真預(yù)測(cè)方法普遍基于兩個(gè)基本假設(shè):(1)輸入輸出線纜是主要的輻射源;(2)共模電流是造成輸入輸出線纜輻射的主要原因[3-6],。而實(shí)際上PCB跡線及元器件的立體結(jié)構(gòu)均會(huì)形成等效天線結(jié)構(gòu),,其輻射特性同樣不可忽視[7-8]?;?a class="innerlink" href="http://forexkbc.com/tags/場(chǎng)路耦合" target="_blank">場(chǎng)路耦合的仿真方法是解決這類多物理場(chǎng)問題的有效方法,。文獻(xiàn)[9]通過建立高頻變壓器100 kHz~200 MHz的行為級(jí)模型,利用CST軟件對(duì)一臺(tái)帶長(zhǎng)線纜的反激變換器遠(yuǎn)場(chǎng)輻射進(jìn)行場(chǎng)路耦合仿真,,較好地?cái)M合了200 MHz以內(nèi)3 m遠(yuǎn)場(chǎng)輻射測(cè)試曲線的趨勢(shì),,但仍存在10~15 dBuV的誤差,且繁雜的變壓器模型將消耗過多的計(jì)算資源,;文獻(xiàn)[10]聯(lián)合Cadence和Ansoft Designer,,對(duì)LLC半橋諧振電路PCB的電流強(qiáng)度和近場(chǎng)輻射進(jìn)行仿真分析,為PCB布局提出整改意見,,但未將遠(yuǎn)場(chǎng)輻射考慮在內(nèi),。




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作者信息:

吳鍵澄1,,楊  汝1,,2,余連德3,,揭  海1,,劉佐濂3

(1.廣州大學(xué) 電子與通信工程學(xué)院,廣東 廣州510006,;2.廣州大學(xué) 機(jī)械與電氣工程學(xué)院,,廣東 廣州510006;

3.廣州大學(xué) 物理與材料科學(xué)學(xué)院,,廣東 廣州510006)




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